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vishay siliconix dg411, dg412, dg413 document number: 70050 s11-1185-rev. g, 13-jun-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 precision monolithic quad spst cmos analog switches description the dg411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. combining low power (0.35 w) with high speed (t on : 110 ns), the dg411 family is ideally suited for portable and battery powered industrial and military applications. to achieve high-voltage ratings and superior switching performance, the dg411 series was built on vishay siliconix?s high voltage silicon gate process. an epitaxial layer prevents latchup. each switch conducts equally we ll in both directions when on, and blocks input voltages up to th e supply levels when off. the dg411, dg412 respond to opposite control logic as shown in the truth table. t he dg413 has two normally open and two normally closed switches. features ? halogen-free according to iec 61249-2-21 definition ? 44 v supply max. rating ? 15 v analog signal range ? on-resistance - r ds(on) : 25 ? ? fast switching - t on : 110 ns ? ultra low power - p d : 0.35 w ? ttl, cmos compatible ? single supply capability ? compliant to rohs directive 2002/95/ec benefits ? widest dynamic range ? low signal errors and distortion ? break-bevor-make switching action ? simple interfacing applications ? precision automatic test equipment ? precision data acquisition ? communication systems ? battery powered systems ? computer peripherals functional block diagram and pin configuration logic ?0? ?? 0.8 v logic ?1? ?? 2.4 v logic ?0? ?? 0.8 v logic ?1? ?? 2.4 v 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 t op v iew in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd v l s 4 s 3 d 4 d 3 in 4 in 3 dual-in-line and soic top view s 1 s 2 v- v+ nc nc gnd v l s 4 s 3 lcc nc in 3 d 3 d 4 in 4 nc in 2 d 2 d 1 in 1 key 910111213 4 5 6 7 8 1 2 32019 14 15 16 17 18 dg41 1 dg411 truth table logic dg411 dg412 0 on off 1offon top view s 1 s 2 v- v+ nc nc gnd v l s 4 s 3 lcc nc in 3 d 3 d 4 in 4 nc in 2 d 2 d 1 in 1 key 910111213 4 5 6 7 8 1 2 32019 14 15 16 17 18 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 t op v iew in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd v l s 4 s 3 d 4 d 3 in 4 in 3 dual-in-line and soic dg413 dg413 truth table logic sw 1 , sw 4 sw 2 , sw 3 0 off on 1onoff
www.vishay.com 2 document number: 70050 s11-1185-rev. g, 13-jun-11 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on s x , d x , or in x exceeding v + or v - will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 6 mw/c above 25 c. d. derate 7.6 mw/c above 75 c. e. derate 12 mw/c above 75 c. ordering information temp. range package part number - 40 c to 85 c 16-pin plastic dip DG411DJ DG411DJ-e3 dg412dj dg412dj-e3 dg413dj dg413dj-e3 16-pin narrow soic dg411dy dg411dy-e3 dg411dy-t1 dg411dy-t1-e3 dg412dy dg412dy-e3 dg412dy-t1 dg412dy-t1-e3 dg413dy dg413dy-e3 dg413dy-t1 dg413dy-t1-e3 16-pin tssop dg411dq-e3 dg411dq-t1-e3 dg412dq-e3 dg412dq-t1-e3 dg413dq-e3 dg413dq-t1-e3 absolute maximum ratings parameter limit unit v + to v - 44 v gnd to v - 25 v l (gnd - 0.3) to (v+) + 0.3 digital inputs a , v s , v d (v-) -2 to (v+) + 2 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma peak current, s or d (pulsed at 1 ms, 10 % duty cycle) 100 storage temperature (ak, az suffix) - 65 to 150 c (dj, dy suffix) - 65 to 125 power dissipation (package) b 16-pin plastic dip c 470 mw 16-pin narrow soic d 600 16-pin cerdip e 900 lcc-20 e 900
document number: 70050 s11-1185-rev. g, 13-jun-11 www.vishay.com 3 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a parameter symbol test conditions unless specified v + = 15 v, v - = - 15 v v l = 5 v, v in = 2.4 v, 0.8 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 15 15 - 15 15 v drain-source on-resistance r ds(on) v + = 13.5 v, v - = - 13.5 v i s = - 10 ma, v d = 8.5 v room full 25 35 45 35 45 ? switch off leakage current i s(off) v + = 16.5, v - = - 16.5 v v d = 15.5 v, v s = 15.5 v room full 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 na i d(off) room full 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 channel on leakage current i d(on) v + = 16.5 v, v - = - 16.5 v v s = v d = 15.5 v room full 0.1 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 digital control input current, v in low i il v in under test = 0.8 v full 0.005 - 0.5 0.5 - 0.5 0.5 a input current, v in high i ih v in under test = 2.4 v full 0.005 - 0.5 0.5 - 0.5 0.5 dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 10 v, see figure 2 room full 110 175 240 175 220 ns turn-off time t off room full 100 145 160 145 160 break-before-make time delay t d dg413 only, v s = 10 v r l = 300 ? , c l = 35 pf room 25 charge injection q v g = 0 v, r g = 0 ? c l = 10 nf room 5 pc off isolation e oirr r l = 50 ??? c l = 5 pf, f = 1 mhz room 68 db channel-to-channel crosstalk e x ta l k room 85 source off capacitance e c s(off) f = 1 mhz room 9 pf drain off capacitance e c d(off) room 9 channel on capacitance e c d(on) room 35 power supplies positive supply current i+ v + = 16.5 v, v - = - 16.5 v v in = 0 v or 5 v room full 0.0001 1 5 1 5 a negative supply current i- room full - 0.0001 - 1 - 5 - 1 - 5 logic supply current i l room full 0.0001 1 5 1 5 ground current i gnd room full - 0.0001 - 1 - 5 - 1 - 5
www.vishay.com 4 document number: 70050 s11-1185-rev. g, 13-jun-11 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a.refer to process option flowchart. b.room = 25 c, full = as determine d by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d.the algebraic convention whereby the most nega tive value is a minimum and the most pos itive a maximum, is used in this data s heet. e.guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c, unless otherwise noted) specifications a (for unipolar supplies) parameter symbol test conditions unless specified v + = 12 v, v - = 0 v v l = 5 v, v in = 2.4 v, 0.8 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 12 12 v drain-source on-resistance r ds(on) v + = 10.8 v, i s = - 10 ma, v d = 3 v, 8 v room full 40 80 100 80 100 ? dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 8 v, see figure 2 room hot 175 250 400 250 315 ns turn-off time t off room hot 95 125 140 125 140 break-before-make time delay t d dg413 only, v s = 8 v r l = 300 ? , c l = 35 pf room 25 charge injection q v g = 6 v, r g = 0 ? , c l = 10 nf room 25 pc power supplies positive supply current i+ v + = 13.5 v, v in = 0 v or 5 v room hot 0.0001 1 5 1 5 a negative supply current i- room hot - 0.0001 - 1 - 5 - 1 - 5 logic supply current i l room hot 0.0001 1 5 1 5 ground current i gnd room hot - 0.0001 - 1 - 5 - 5 on-resistance vs. v d and power supply voltage v d - drain v oltage ( v ) - 20 - 15 - 10 - 5 0 5 10 15 20 45 40 35 30 25 20 15 10 5 0 50 r ds(on) - drain-so u rce on-resistance ( ) t a = 25 c 5 v 8 v 10 v 12 v 15 v 20 v on-resistance vs. v d and unipolar supply voltage 0 2 4 6 8 101214161820 0 50 100 150 200 250 300 v v l = 5 v v+ = 3 v v l = 3 v 8 v v+ = 5 v 12 v 15 v 20 v v d - drain voltage (v)
document number: 70050 s11-1185-rev. g, 13-jun-11 www.vishay.com 5 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) leakage current vs. analog voltage charge injection vs. analog voltage input switching threshold vs. supply voltage (pa) i , i sd v d or v s - drain or source voltage (v) 30 10 - 40 - 60 - 15 - 10 - 5 0 5 10 15 20 0 - 50 - 30 - 10 - 20 v+ = 15 v v- = - 15 v v l = 5 v t a = 25 c i d(of f) i s( of f) i d(on) 40 q (pc) v s - source voltage (v) 100 80 60 40 20 0 - 20 - 40 - 60 - 15 - 10 - 5 0 5 10 15 v+ = 15 v v- = - 15 v v l = 5 v c l = 10 nf c l = 1 nf (v) th v 3.5 3.0 5 1015202530354 0 2.5 2.0 1.5 1.0 0.5 0 (v+) 6.5 v 5.5 v v l = 7.5 v 4.5 v i d , i s leakages vs. temperature charge injection vs. analog voltage switching time vs. temperature - 15 - 10 - 5 0 5 10 15 5 10 15 20 25 30 35 v+ = 15 v v- = - 15 v v l = 5 v 125 c 85 c 25 c - 55 c r ds(on) - drain-source on-resistance ( ? ) v d - drain voltage (v) v d - drain voltage (v) q (pc) 100 80 60 40 20 0 - 20 - 40 - 60 - 15 - 10 - 5 0 5 10 15 120 140 v+ = 15 v v- = - 15 v v l = 5 v c l = 10 nf c l = 1 nf temperature (c) (ns) t on ,t off 240 180 120 60 0 - 55 - 35 - 15 5 25 45 65 85 105 125 210 150 90 30 v+ = 15 v v- = - 15 v v l = 5 v v s = 10 v t off t on
www.vishay.com 6 document number: 70050 s11-1185-rev. g, 13-jun-11 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) schematic diagram (typical channel) test circuits supply current vs. input switching frequency f - frequency (hz) i supply 100 ma 10 ma 1 ma 100 a 10 a 1 a 100 na 10 na 100 1k 10k 100k 1m 10m i+, i- i l v+ = 15 v v- = - 15 v v l = 5 v = 1 sw = 4 sw 10 figure 1. level shift/ drive v in v l s v+ gnd v- d v- v+ figure 2. switching time 0 v logic input switch input* switch output 3 v 50 % 0 v switch input* v s t r < 20 ns t f < 20 ns 90 % - v s t on t on v o 90 % v o * v s = 10 v for t on , v s = - 10 v for t off note: logic input waveform is inverted for switches that have the opposite logic sense control c l (includes fixture and stray capacitance) v+ in r l r l + r ds(on) v o = v s s d - 15 v v o gnd 10 v v l c l 35 pf v- r l 300 ? + 15 v + 5 v
document number: 70050 s11-1185-rev. g, 13-jun-11 www.vishay.com 7 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 3. break-before-make (dg413) 0 v logic input switch switch output 3 v 50 % 0 v output 0 v 90 % v o2 v o1 90 % v s1 v s2 t d t d v o2 c l (includes fixture and stray capacitance) v+ s 2 v- s 1 v l v s2 in 2 d 2 v s1 r l2 300 ? d 1 v o1 c l2 35 pf - 15 v gnd + 5 v + 15 v r l1 300 ? c l1 35 pf in 1 figure 4. charge injection c l 10 nf d r g v o v+ s v- 3 v in v l v g - 15 v gnd + 15 v + 5 v off on off off on off v o ? v o in x in x q = ? v o x c l in x dependent on switch configuration input polarity determined by sense of switch. figure 5. crosstalk 0 v, 2.4 v s 1 x ta l k isolation = 20 log v s v o d 2 c = rf bypass r l d 1 s 2 v s 0 v, 2.4 v in 1 50 ? v o in 2 r g = 50 ? v l v+ - 15 v gnd v- nc c + 15 v c + 5 v c
www.vishay.com 8 document number: 70050 s11-1185-rev. g, 13-jun-11 vishay siliconix dg411, dg412, dg413 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 applications single supply operation: the dg411, dg412, dg413 can be operated with unipolar supplies from 5 v to 44 v. these devices are characterized and tested for unipolar supply operation at 12 v to facilitate the majority of applications. in single supply operation, v+ is tied to v l and v- is tied to 0 v. see input switching threshold vs. supply voltage curve for v l versus input threshold requirments. summing amplifier when driving a high impedance, high capacitance load such as shown in figure 8, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70050 . figure 6. off isolation r l 50 ? d 0 v, 2.4 v v+ r g = 50 ? - 15 v gnd v- c v s off isolation = 20 log v s v o in v l v o + 5 v c + 15 v s c c = rf bypass figure 7. source/drain capacitances d in s v l v+ - 15 v gnd v- c 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent + 5 v c + 15 v c figure 8. summing amplifier + - dg413 r 1 r 2 c 1 r 3 r 4 c 2 r 6 r 5 v in 1 v in 2 v out
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
e 1 e q 1 a l a 1 e 1 b b 1 s c e a d 15 max 12345678 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71261 06-jul-01 www.vishay.com 1

dim min max min max a 3.81 5.08 0.150 0.200 a 1 0.38 1.27 0.015 0.050 b 0.38 0.51 0.015 0.020 b 1 0.89 1.65 0.035 0.065 c 0.20 0.30 0.008 0.012 d 18.93 21.33 0.745 0.840 e 7.62 8.26 0.300 0.325 e 1 5.59 7.11 0.220 0.280 e 1 2.29 2.79 0.090 0.110 e a 7.37 7.87 0.290 0.310 l 2.79 3.81 0.110 0.150 q 1 1.27 2.03 0.050 0.080 s 0.38 1.52 .015 0.060 ecn: s-03946?rev. d, 09-jul-01 dwg: 5482
e 1 e q 1 a l a 1 e 1 b b 1 l 1 s c e a d 12 3 4 5 6 7 8 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71282 03-jul-01 www.vishay.com 1
dim min max min max a 4.06 5.08 0.160 0.200 a 1 0.51 1.14 0.020 0.045 b 0.38 0.51 0.015 0.020 b 1 1.14 1.65 0.045 0.065 c 0.20 0.30 0.008 0.012 d 19.05 19.56 0.750 0.770 e 7.62 8.26 0.300 0.325 e 1 6.60 7.62 0.260 0.300 e 1 2.54 bsc 0.100 bsc e a 7.62 bsc 0.300 bsc l 3.18 3.81 0.125 0.150 l 1 3.81 5.08 0.150 0.200 q 1 1.27 2.16 0.050 0.085 s 0.38 1.14 0.015 0.045 0 15 0 15 ecn: s-03946?rev. g, 09-jul-01 dwg: 5403
d l 1 e b l e a 1 a 28 1 2 packaging information vishay siliconix document number: 71290 02-jul-01 www.vishay.com 1

dim min max min max 1.37 2.24 0.054 0.088 1.63 2.54 0.064 0.100 0.56 0.71 0.022 0.028 8.69 9.09 0.342 0.358 8.69 9.09 0.442 0.358 1.27 bsc 0.050 bsc 1.14 1.40 0.045 0.055 1.96 2.36 0.077 0.093 ecn: s-03946?rev. b, 09-jul-01 dwg: 5321
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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